FDMS86200
Manufacturer:
On Semiconductor
Mfr.Part #:
FDMS86200
Datasheet:
Description:
MOSFETs PQFN-8 SMD/SMT N-Channel number of channels:1 2.5 W 150 V Continuous Drain Current (ID):9.6 A 33 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 21 mΩ |
| Height | 1.05 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 104 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 2.715 nF |
| Continuous Drain Current (ID) | 9.6 A |
| Rds On Max | 18 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Single |
| Fall Time | 5.8 ns |
| Rise Time | 7.9 ns |
| Gate Charge | 33 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2346
Distributors
pcbx
pcbxUnit Price$1.33882
Ext.Price$1.33882
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.33882 | $1.33882 |
| 10 | $1.11014 | $11.10140 |
| 25 | $1.01534 | $25.38350 |
| 50 | $0.92863 | $46.43150 |
| 100 | $0.84933 | $84.93300 |
| 300 | $0.81655 | $244.96500 |
| 500 | $0.78502 | $392.51000 |
| 1000 | $0.75757 | $757.57000 |